MIL MIL-PRF-19500/614B Historical

Document History

1. MIL MIL-PRF-19500/614L

   August 2018
   Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS

   •  Most Recent

2. MIL MIL-PRF-19500/614K

   July 2015
   Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS

   • Historical Version

3. MIL MIL-PRF-19500/614J

   April 2014
   Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS

   • Historical Version

4. MIL MIL-PRF-19500/614H

   May 2013
   Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS

   • Historical Version

5. MIL MIL-PRF-19500/614G

   March 2012
   Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS

   • Historical Version

6. MIL MIL-PRF-19500/614F

   November 2007
   Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7380 and 2N7381, JANTXV M, D, R, F, G, and H, JANS M, D, R, F, G, and H

   • Historical Version

7. MIL MIL-PRF-19500/614E

   November 2006
   SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H(SUPERSEDING MIL-PRF-19500/614D)

   • Historical Version

8. MIL MIL-PRF-19500/614D

   December 2004
   SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H (SUPERSEDING MIL-PRF-19500/614C)(S/S BY MIL-PRF-19500/614E)

   • Historical Version

9. MIL MIL-PRF-19500/614C

   September 2003
   SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDNEND TRANSISTOR N-CHANNEL SILICON TYPES 2N7380 2N7381 JANTXV M D R F G H JANS M D R F G H (SUPERSEDING MIL-PRF-19500/614B) (S/S BY MIL-PRF-19500/614D)

   • Historical Version

10. MIL MIL-PRF-19500/614B

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    February 2002
    SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR N-CHANNEL SILICON TYPES 2N7380 AND 2N7381 JANTXV M D R F G AND H JANS M D R F G AND H (SUPERSEDING MIL-PRF-19500/614A) (S/S BY MIL-PRF-19500/614C)

    • Historical Version

11. MIL MIL-PRF-19500/614A

    May 1996
    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, MD, R, F, G AND H JANS M,D,R,F,G, AND H (SUPERSEDING MIL-S-19500/614) (S/S BY MIL-PRF-19500/614B)

    • Historical Version

12. MIL MIL-S-19500/614

    January 1994
    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381 JANTXV M, D, R, F, G, AND H JANS M, D, R, F, G, AND H (S/S BY MIL-PRF-19500/614A)

    • Historical Version